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The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is a research institute, which belongs to the Forschungsverbund Berlin e. V. (FVB) and is a member of the Gottfried Wilhelm Leibniz Scientific Community. The institute is located in Berlin at the Wissenschafts- und Wirtschaftsstandort Adlershof (WISTA), its research activity is applied science in the fields of microwaves und optoelectronics. The FBH is an internationally recognized centre for III / V compound semiconductors with all competencies: from design, through manufacturing, to the characterization of components. For partners from research and industry, the FBH develops high-quality products and services that are exactly tailored to individual requirements. Its international customer base offers know-how and complete solutions from a single source: from the design to the deliverable module. The FBH carries out application-oriented and industrial research in the field of high-frequency technology, especially in the areas of micro- and millimetre-wave technology and optoelectronics. The FBH works on a disciplinary and interdisciplinary basis in the areas of components, circuits and systems, material and process technology as well as computer-assisted design methods. The Forschungsverbund Berlin eV , which also includes the Ferdinand-Braun-Institut, is the bearer of eight research, life science and life sciences research institutes in Berlin. All institutes are scientifically independent, but they share common interests within the framework of a uniform legal personality. As research institutions of supraregional importance and national scientific interest, the institutes are funded within the framework of the joint research funding of the Federal Government and the Länder. They have a common administrative infrastructure ("Verbundverwaltung") and are members of the Leibniz Association. The directors of the institutes and other leading scientists hold chairs at the universities in Berlin / Brandenburg, thus ensuring a close connection to teaching and research in the universities. One of its interesting research is on Gallium oxide MISFETs for power electronics applications. Gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap semiconductor for future power electronics applications due to its outstanding material properties like breakdown field strength even higher than for GaN. State-of-the-art metal-isolator-semiconductor field-effect transistors (MISFETs) were successfully processed at FBH on β-Ga2O3 epitaxial material from the Leibniz Institute for Crystal Growth (IKZ). The gallium oxide substrates were also fabricated at IKZ using Czochralski bulk crystal growth method.
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