Effect of Qamma Irradiation on Optoelectronic Properties of Two Barrier Structures of Nano Crystalline Silicon Solar Cells
Received Date: Jan 10, 2018 / Accepted Date: Jan 16, 2018 / Published Date: Jan 23, 2018
Abstract
The possibilities of applying the technology of plasma-chemical deposition of films of a-Si1-xGex: H (x=0 ÷ 1), undoped and doped with PH3 and B2H6, for use in a pin-structure solar cells. The optical, electrical and photoelectric properties, as determined by the amount of hydrogen of the film. We found that the property of the film strongly depends on the composition and level of hydrogenation. The number of hydrogen atoms in the films was varied by changing the composition of the gas mixture and measured the infrared absorption films a-Si:H and a-Ge:H.
Keywords: Silicon thin films; Method double-barrier structure analysis; Coefficient of carrier collection; Photocurrent photogeneration
Citation: Abasov FP (2018) Effect of Qamma Irradiation on Optoelectronic Properties of Two Barrier Structures of Nano Crystalline Silicon Solar Cells. Innov Ener Res 7: 181. Doi: 10.4172/2576-1463.1000181
Copyright: © 2018 Abasov FP. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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