Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET
Received Date: Nov 02, 2015 / Accepted Date: Dec 10, 2015 / Published Date: Dec 16, 2015
Abstract
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel effect for the submicronic Symmetric DG FD SOI MOSFET. In this paper, we figure out the 2D Poisson equation and we analytically write using the evanescent model, the surface potential, the threshold voltage, the DIBL and the sub-threshold swing. The natural scale length for the polynomial model λp and its corrected form λpc including the ECPE are mentioned. The results, of the analysis of the short-channel effects (SCEs), show a good agreement of the evanescent model and the polynomial model including the ECPE with measures done by simulation tools.
Keywords: Evanescent and polynomial models; Effective conduction path effect; Surface potential; Threshold voltage; DIBL; Sub-threshold swing; Symmetric double gate fully depleted SOI MOSFET
Citation: Nouacry A, Bouziane A, Aouaj A, Touhami A (2015) Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET. Innov Ener Res 4: 127.
Copyright: ©2015 Nouacry A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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