alexa Analytical Vth, DIBL and Swing with and without Effecti

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Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET

Nouacry A1,2*, Bouziane A2, Aouaj A2 and Touhami A1

1Laboratoire Physique des Materiaux, Microelectronique, Automatique et Thermique–Universite Hassan II, Faculte des Sciences Ain Chock BP 5366 Maarif Casablanca, 20100 Maroc (Morocco)

2Laboratoire d’Automatique, de Conversion d’energie et de Microelectronique-Universite Sultan Moulay, Slimane Faculte des Sciences et Techniques BP523, Beni-Mellal, CP23000, Maroc (Morocco)

*Corresponding Author:
Nouacry A
Laboratoire Physique des Materiaux
Automatique et Thermique–Universite Hassan II
Faculte des Sciences Ain Chock BP 5366 Maarif Casablanca
20100 Maroc, Morocco
Tel: 212523485112
Fax: 212523485201
E-mail: [email protected]

Received date: November 02, 2015; Accepted date: December 10, 2015; Published date: December 16, 2015

Citation: Nouacry A, Bouziane A, Aouaj A, Touhami A (2015) Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET. Innov Ener Res 4:127. doi:10.4172/ier.1000127

Copyright: ©2015 Nouacry A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.



We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel effect for the submicronic Symmetric DG FD SOI MOSFET. In this paper, we figure out the 2D Poisson equation and we analytically write using the evanescent model, the surface potential, the threshold voltage, the DIBL and the sub-threshold swing. The natural scale length for the polynomial model λp and its corrected form λpc including the ECPE are mentioned. The results, of the analysis of the short-channel effects (SCEs), show a good agreement of the evanescent model and the polynomial model including the ECPE with measures done by simulation tools.


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