Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET
- *Corresponding Author:
- Nouacry A
Laboratoire Physique des Materiaux
Automatique et Thermique–Universite Hassan II
Faculte des Sciences Ain Chock BP 5366 Maarif Casablanca
20100 Maroc, Morocco
E-mail: [email protected]
Received date: November 02, 2015; Accepted date: December 10, 2015; Published date: December 16, 2015
Citation: Nouacry A, Bouziane A, Aouaj A, Touhami A (2015) Analytical Vth, DIBL and Swing with and without Effective Conducting Path Effect (ECPE) for the Submicronic SDG FD SOI MOSFET. Innov Ener Res 4:127. doi:10.4172/ier.1000127
Copyright: ©2015 Nouacry A, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel effect for the submicronic Symmetric DG FD SOI MOSFET. In this paper, we figure out the 2D Poisson equation and we analytically write using the evanescent model, the surface potential, the threshold voltage, the DIBL and the sub-threshold swing. The natural scale length for the polynomial model λp and its corrected form λpc including the ECPE are mentioned. The results, of the analysis of the short-channel effects (SCEs), show a good agreement of the evanescent model and the polynomial model including the ECPE with measures done by simulation tools.