An Application Of The Secondary-ion Photoeffect To The Analyses Of A Structure Semiconductordielectric | 10251
Journal of Analytical & Bioanalytical Techniques
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Effect of an additional illumination on the yield of secondary ions that discovered and preliminary studed some of authors
mentioned was called secondary-ion photoeffect (SIPE). There are two kinds of this effect: normal and anomalous. The first
realises in decrease of the secondary ion yield under illumination. The second increases such yield. The physical reason for the
normal SIPE is connected with the compensation of secondary ions by electrons induced with ions outputting from a target to
vacuum (compensating mechanism). In the case of anomalous SIPE the sufficient role play peculiarities of band structure in
heterophase semiconductor. In our case polycrystalline semiconductor CdS(0,9)-PbS(0,1) consists of two phases: wide-gap phase
with a composition near to CdS and narrow-gap phase (limited solid solution of CdS in PbS). Electron-hole pairs generated in
the preliminating wide-gap phase and diffused to narrow-gap one where they recombine with creation of the excessive energy to
enlight the secondary-ion output (recombination mechanism). Often there exsist a concurention of two mechanisms and one of
them preliminates. If additional light passes through optical filters, it was shown that normalous SIPE takes place at short-wave
illumination a localization of wich is often connected with luminescence. In such a way a control of SIPE type is possible.
The results achieved on the model substance CdS-PbS are broadening on a more wider circle of substances: amorphous SiO
and crystalline GaAs.
The aim of the present report is an aplication of results achieved to semiconductor or semiconductor-dilectric layer
structures, namely SiO-AlGaAs-GaAs. Usual mass-spectrometric analyses of this structure was added by the SIPE analyse. White
light was interrupted in two minutes. Duration of illumination was equal to the pause. Comparison of two investigation shows
more distinctly space localization of ion output in the second case.
The measuring described is added by the investigation on an electron microscope in the regime of secondary electrons and
cathodoluminescence. Measurements are fulfilled on Ar+ primary ions. Results obtained are connected with anomalous SIPE
and positive secondary ions. A dependence of the secondary ion output on the character of connection with the earth is also
investigated. A possibility of creation a transistor or phototransistor like structure with ion output is discussed.
A. G. Rokakh was graduated from Saratov State University in 1957 (physical department) and continued his work as a scientific researcher and
a teacher. He is a Professor of the Nano- and Biotechnology department of the Saratov N.G. Chernyshevsky State University. He has above 350
publications in various fields. He was a member of the desk board of the international journal Physics Express and a nominator of "Prof. A.G. Rokakh
Award" for the best paper of this journal in semiconductor physics; the Full Member of the American Nano Society.
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