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Rajendra Singh received his Ph.D. in Physics from Inter-University Accelerator Centre (IUAC). Jawaharlal Nehru University, New Delhi, India in 2001. His Ph.D. work was concerned with the study of the effect of Swift heavy ion irradiation on the electrical properties of Si and GaAs. After that he worked as a post doctoral fellow at the Walter Schottky Instistute, Technical University Munich, Germany from October, 2001 to December 2003. There he worked on the design. fabrication and characterization of InP-Based heterojunction bipolar transistors. From Januaty, 2004 to November, 2006 he wotked at the Max Planck Institute of Microstructute Physics, Halle, Germany. He was involved in the area of semiconductor wafer bonding.stained silicon-on-insu1ator (sSOI) fabrication and hydrogen-implantation-induced layer .plitting studies in SiGe, GaN, InP, ZnO etc. He extensively used Class 1 cleanrooom facilities for his research regarding semiconductor and material. and device processing. He has published about 40 publications in the international journal. and edited volumes.
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