Bond Formation Perspective: Effect of Sn Addition in Se-Te-Sn Chalcogenide GlassesVibhav K Saraswat1*, NS Saxena2
- Corresponding Author:
- Vibhav K Saraswat
Deptartment of Physics
Banasthali-304022, Tonk India
Email: [email protected]
Received: 22/09/2012; Revised: 07/10/2012; Accepted: 10/11/2012
The aim of this study is to investigate the effect of Tin (Sn) addition on Band gap (Eg) and Dc conductivity of Se-Te-Sn semi-conducting glasses. This is an effort towards the understanding of physics of temperature dependence of dc electrical volume conductivity of Se75Te25-xSnx (X= 2, 4, 6 & 8) glasses in bulk form. These Chalcogenide glasses were prepared by melt quenching (rapid cooling of melt) technique. The amorphous nature of as prepared glass was confirmed by XRD. Using Keithley Electrometer / High resistance Meter 6517 A, the I-V characteristics of these glasses have been recorded in a temperature range from room temperature to 100ÃƒÂ‹Ã‚ÂšC. Additionally, the Poole-Frenkel conduction mechanism has also been verified in order to investigate the good agreement with the established fact that most of Chalcogenide glasses obey Poole-Frenkel conduction mechanism. To calculate the Band gap, with the help of Ocean Optics Spectrophotometer, absorption spectra has been recorded. Analysis of these absorption spectra using Tauc relation reveals that these glasses are semiconducting and direct band gap material.